Formation of ultra-thin silicon-on-insulator materials by low-dose low-energy oxygen ion implantation

被引:7
作者
Wang, X [1 ]
Chen, J [1 ]
Dong, YM [1 ]
Chen, M [1 ]
Wang, X [1 ]
机构
[1] Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1016/S0009-2614(02)01666-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High quality ultra-thin silicon-on-insulator (SOI) materials have been fabricated by low-energy low-dose separation-by-implantation-of-oxygen (SIMOX) method. The thicknesses of the top silicon and the buried oxide (BOX) layers are only 70 and 40 nm, respectively, for the sample implanted with dose of 1.8 x 10(17) O+/cm(2) at the ion energy of 45 keV. The pinhole density of the BOX layer is less than 0.1 cm(-2), and the thickness uniformity of both the top silicon and the BOX layers over the whole wafer is within 2 nm. The fabricated high quality ultra-thin SOI materials are desirable for the advanced integrated circuits (ICs) manufacturing. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:44 / 48
页数:5
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