Zn2GeO4:Mn alternating-current thin-film electroluminescent devices

被引:58
作者
Bender, JP [1 ]
Wager, JF
Kissick, J
Clark, BL
Keszler, DA
机构
[1] Oregon State Univ, Dept Elect & Comp Engn, Corvallis, OR 97331 USA
[2] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA
基金
美国国家科学基金会;
关键词
thin-film electroluminescent device; electroluminescence; oxide phosphor; Zn2GeO4;
D O I
10.1016/S0022-2313(02)00349-6
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Electrical, electro-optic, temperature, and aging characteristics of green-emitting Zn2GeO4:Mn alternating-current thin-film electroluminescent (ACTFEL) devices are presented. The Zn2GeO4:Mn phosphor layers are prepared by RF sputtering. A maximum luminous efficiency of 0.45 1m/W and luminance of 105 cd/m(2) at 60 Hz and 40 V above threshold are obtained. Field-ionization of impact-excited Mn2+ luminescent impurities is found to give rise to positive space charge within the Zn2GeO4 phosphor, leading to unusual device behaviors such as conduction current delay, anomalous positive polarity transient luminance annihilation, transferred charge being comprised of mainly relaxation charge, and a decrease in the 60 Hz threshold voltage with increasing temperature. Low temperature aging experiments suggest that aging is at least partially due to hot electron-induced degradation. Although most Zn2GeO4:Mn ACTFEL devices exhibit a moderate amount of aging, certain devices are found to exhibit no measurable aging at 1 kHz when aged for 24 h. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:311 / 324
页数:14
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