Polarity-dependent emission and conversion characteristics of GaN-based thermionic cathodes

被引：0

作者：

Kimura, Shigeya ^{[1
]}

Yoshida, Hisashi ^{[1
]}

Miyazaki, Hisao ^{[1
]}

Ito, Takeshi ^{[2
]}

Ogino, Akihisa ^{[2
]}

机构：

[1] Toshiba Co Ltd, Res & Dev Ctr, Kawasaki, Kanagawa, Japan

[2] Shizuoka Univ, Grad Sch Integrated Sci & Technol, Naka Ku, Hamamatsu, Shizuoka, Japan

来源：

2020 33RD INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2018年

关键词：

GaN; polarity; Cs; thermionic emission; thermionic converter;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We observed the polarity-dependent thermionic emission and conversion characteristics of Si-doped n-type GaN-based cathodes with Cs adsorbed on their surfaces. Emission current from the surface of the GaN sample with N-polarity was markedly higher than that with Ga-polarity. We consider that the N-polarity enhanced the surface potential lowering for electrons due to the Cs atom adsorption. These results indicate that, from the viewpoint of a thermionic converter, the electromotive force for emission was higher for N-polarity compared with Ga-polarity.

引用

页码：31 / 32

页数：2

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