Spin depolarization of holes and lineshape of the Hanle effect in semiconductor nanostructures

被引：8

作者：

Andreev, S. V. ^{[1
]}

Namozov, B. R. ^{[1
]}

Koudinov, A. V. ^{[1
]}

Kusrayev, Yu. G. ^{[1
]}

Furdyna, J. K. ^{[2
]}

机构：

[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 11期

关键词：

QUANTUM-WELLS; HEAVY; DOTS;

D O I：

10.1103/PhysRevB.80.113301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the statistical effect of random in-plane deformations on the magnetic field depolarization of photoluminescence (the Hanle effect) in quasi-two-dimensional semiconductor nanostructures such as quantum wells or disklike quantum dots. Provided that the optical orientation signal from the sample is due to the nonequilibrium spin polarization of holes, the lineshape of the Hanle effect becomes non-Lorentzian. This results from a scatter of hole g-factor values, which is immanent to the hole ensembles in such systems. Analysis of the lineshape of the Hanle effect holds promise as a tool for distinguishing between X(+) and X(-) trion states in nanostructures.

引用

页数：4

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