Geometric effect of multiple-bit soft errors induced by cosmic ray neutrons on DRAM's

被引：76

作者：

Satoh, S ^{[1
]}

Tosaka, Y

Wender, SA

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

[2] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 06期

关键词：

cosmic ray neutrons; geometric effect; multiple-bit SE; 16 Mb DRAM; soft error;

D O I：

10.1109/55.843160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Although it has been shown that cosmic ray neutrons play an important role in soft error (SE) phenomena, some important issues remain to be clarified in neutron-induced SE phenomena. This letter reports the geometric effect of multiple-hit SE's induced by neutrons. Multiple-hit SE's in 16Mb DRAM's are investigated and their geometric effects on high reliability systems are discussed.

引用

收藏

页码：310 / 312

页数：3

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