The Influence of the Energy of Ar+ Ion Implantation on the Photoluminescence of Porous Silicon

被引：0

作者：

Kozhemiako, A. V. ^{[1
]}

Shemukhin, A. A. ^{[2
,3
]}

Nazarov, A. V. ^{[1
]}

Spivak, Yu. M. ^{[4
]}

Muratova, E. N. ^{[4
]}

Chernysh, V. V. ^{[1
,2
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119991, Russia

[2] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia

[3] Moscow MV Lomonosov State Univ, Ctr Quantum Technol, Moscow 119991, Russia

[4] St Petersburg Electrotech Univ LETI, Dept Micro & Nanoelect, St Petersburg 197376, Russia

来源：

MOSCOW UNIVERSITY PHYSICS BULLETIN | 2020年 / 75卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

porous silicon; ion implantation; photoluminescence;

D O I：

10.3103/S0027134920060120

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Irradiation of porous silicon with Ar+ ions at energies from 100 to 400 keV and fluence of 10(12) cm(-2) was carried out. The effect of ion irradiation at different energies of incident particles on the photoluminescence spectrum of porous silicon has been studied. it has been shown that the photoluminescence spectrum consists of two components. One of then is associated with the presence of structural defects; another, with the surface states on the complex surface of porous silicon. A method for estimating the thickness of the luminescent layer based on the analysis of the photoluminescence peak associated with defects is proposed.

引用

页码：590 / 595

页数：6

共 42 条

[1] Origin of Porous Silicon Photoluminescence Peaks in the Wavelength Range 460-700 nm
Abramova, E. N.
Khort, A. M.
Yakovenko, A. G.
Tsygankova, M. V.
Syrov, Yu. V.
Sorokin, T. A.
Shvets, V. I.
[J]. DOKLADY CHEMISTRY, 2018, 481 : 166 - 169
[2] Properties of P-type porous silicon bombarded by neutrons
Ali, Ghazwan Ghazi
Karomi, Ivan B.
Sulaiman, Abdulkhaliq Ayuob
Mohammed, Abidalkarem M.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 468 : 23 - 27
[3] Enhancement of porous silicon photoluminescence property by lithium chloride treatment
Azaiez, Khawla
Zaghouani, Rabia Benabderrahmane
Khamlich, Saleh
Meddeb, Hosny
Dimassi, Wissem
[J]. APPLIED SURFACE SCIENCE, 2018, 441 : 272 - 276
[4] Raman and photoluminescence study of ion beam irradiated porous silicon: a case for the astrophysical extended red emission?
Baratta, GA
Strazzulla, G
Compagnini, G
Longo, P
[J]. APPLIED SURFACE SCIENCE, 2004, 226 (1-3) : 57 - 61
[5] Barbour J. C., 1992, Nanotechnology, V3, P202, DOI 10.1088/0957-4484/3/4/011
[6] Porous silicon implanted with nitrogen by plasma immersion ion implantation
Beloto, AF
Ueda, M
Abramof, E
Senna, JR
Leite, NF
da Silva, MD
Reuther, H
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 224 - 228
[7] FTIR studies of swift silicon and oxygen ion irradiated porous silicon
Bhave, TM
Hullavarad, SS
Bhoraskar, SV
Hegde, SG
Kanjilal, D
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 156 (1-4) : 121 - 124
[8] ATMOSPHERIC IMPREGNATION OF POROUS SILICON AT ROOM-TEMPERATURE
CANHAM, LT
HOULTON, MR
LEONG, WY
PICKERING, C
KEEN, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 422 - 431
[9] Dynamical effects of defect photoluminescence from single SiO2 and Si nanoparticles
Chizhik, Alexey I.
Schmidt, Torsten
Chizhik, Anna M.
Huisken, Friedrich
Meixner, Alfred J.
[J]. SELECTED PAPERS FROM 17TH INTERNATIONAL CONFERENCE ON DYNAMICAL PROCESSES IN EXCITED STATES OF SOLIDS (DPC'10), 2011, 13
[10] Radiation-induced paramagnetic defects in porous silicon under He and Ar ion irradiation
Evseev, A. P.
Kozhemiako, A., V
Kargina, Yu, V
Balakshin, Yu, V
Zvereva, E. A.
Chernysh, V. S.
Gongalsky, M. B.
Shemukhin, A. A.
[J]. RADIATION PHYSICS AND CHEMISTRY, 2020, 176

← 1 2 3 4 5 →