Efficient blue lasers based on gain structure optimizing of vertical-external-cavity surface-emitting laser with second harmonic generation

被引：18

作者：

Kim, Jun-Youn ^{[1
]}

Cho, Soohaeng ^{[1
]}

Lim, Seong-Jin ^{[1
]}

Yoo, Jaeryung ^{[1
]}

Kim, Gi Bum ^{[1
]}

Kim, Ki-Sung ^{[1
]}

Lee, Junho ^{[1
]}

Lee, Sang-Moon ^{[1
]}

Kim, Taek ^{[1
]}

Park, Yongjo ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Display Devices & Mat Lab, Photon Project Team, Suwon 440600, Gyeonggi, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 03期

关键词：

D O I：

10.1063/1.2432366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the demonstration of highly efficient blue lasers based on intracavity frequency doubling vertical-external-cavity surface-emitting lasers (VECSELs). By optimizing the number of InGaAs quantum wells and employing Al0.3Ga0.7As carrier blocking layers in resonant periodic gain structures, we observed the pump-power-limited output power of 4.5 W at 920 nm for an InGaAs/GaAs quantum well VECSEL. With a frequency doubling LiB3O5 crystal inside the cavity, 1.9 W continuous-wave 460 nm blue output was demonstrated. Power conversion efficiencies (= output power/pump input power) of 22.5% and 9.5% are realized for lambda similar to 920 nm and lambda similar to 460 nm, respectively. (c) 2007 American Institute of Physics.

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页数：4

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