Crystal Structure of Stacking Faults in InGaAs/InAlAs/InAs Heterostructures

被引：2
作者：
Trunkin, I. N. [1 ]
Presniakov, M. Yu. [1 ]
Vasiliev, A. L. [1 ,2 ]
机构：
[1] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia
[2] Russian Acad Sci, Fed Sci Res Ctr Crystallog & Photon, Shubnikov Inst Crystallog, Moscow 119333, Russia
来源：
CRYSTALLOGRAPHY REPORTS | 2017年 / 62卷 / 02期
关键词：
HEMT NANOHETEROSTRUCTURES; ELECTRICAL-PROPERTIES; INAS INSERTS; CONFIGURATIONS; DEFECTS;
D O I：
10.1134/S1063774517020298
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied by electron microscopy. The use of different techniques of transmission electron microscopy (primarily, highresolution dark-field scanning transmission electron microscopy) has made it possible to determine the defect structure at the atomic level.
引用
收藏
页码：265 / 269
页数：5
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