Fabrication of Sb-doped p-type ZnO thin films by pulsed laser deposition

被引：75
作者：
Pan, Xinhua
Ye, Zhizhen [1 ]
Li, Jiesheng
Gu, Xiuquan
Zeng, Yujia
He, Haiping
Zhu, Liping
Che, Yong
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] IMRA Amer Inc, Ann Arbor, MI 48105 USA
来源：
APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 11期
基金：
中国国家自然科学基金;
关键词：
ZnO; Sb-doped; pulsed laser deposition; X-ray photoemission spectroscopy;
D O I：
10.1016/j.apsusc.2006.11.014
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
p-Type ZnO thin films have been realized via monodoping antimony (Sb) acceptor by using pulsed laser deposition. The obtained films with the best electrical properties show a hole concentration in the order of 10(18) cm(-3) and resistivity in the range of 2-4 Omega cm. X-ray diffraction measurements revealed that all the films possessed a good crystallinity with (0 0 2)-preferred orientation. Guided by X-ray photoemission spectroscopy analysis and a model for large-sized-mismatched group-V dopant in ZnO, an Sb-Zn-2V(Zn) complex is believed to be the most possible acceptor in the Sb-doped p-type ZnO thin films. sigma 2006 Elsevier B.V. All rights reserved.
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页码：5067 / 5069
页数：3
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