Black phosphorene/monolayer transition-metal dichalcogenides as two dimensional van der Waals heterostructures: a first-principles study

被引:104
作者
You, Baiqing [1 ]
Wang, Xiaocha [1 ]
Zheng, Zhida [1 ]
Mi, Wenbo [2 ]
机构
[1] Tianjin Univ Technol, Sch Elect Informat Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China
[2] Tianjin Univ, Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300354, Peoples R China
关键词
ELECTRONIC-PROPERTIES; MOS2; PHOSPHORUS; TRANSPORT; GRAPHENE;
D O I
10.1039/c5cp07585h
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electronic structure of black phosphorene (BP)/monolayer 1H-XT2 (X = Mo, W; T = S, Se, Te) two dimensional (2D) van der Waals heterostructures have been calculated by the first-principles method. It is found that the electronic band structures of both BP and XT2 are preserved in the combined van der Waals heterostructures. The WSe2/BP van der Waals heterostructure demonstrates a type-I band alignment, but the MoS2/BP, MoSe2/BP, MoTe2/BP, WS2/BP and WTe2/BP van der Waals heterostructures demonstrate a type-II band alignment. In particular, the n-type XT2/p-type BP van der Waals heterostructures can be applied in p-n diode and logical devices. Strong spin splitting appears in all of the heterostructures when considering the spin orbital coupling. Our results play a significant role in the prediction of novel 2D van der Waals heterostructures that have potential applications in spin-filter devices, spin field effect transistors, optoelectronic devices, etc.
引用
收藏
页码:7381 / 7388
页数:8
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