Manipulation of Electric Field Effect by Orbital Switch

被引：56

作者：

Cui, Bin ^{[1
]}

Song, Cheng ^{[1
]}

Mao, Haijun ^{[1
]}

Yan, Yinuo ^{[1
]}

Li, Fan ^{[1
]}

Gao, Shuang ^{[1
]}

Peng, Jingjing ^{[1
]}

Zeng, Fei ^{[1
]}

Pan, Feng ^{[1
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China

来源：

ADVANCED FUNCTIONAL MATERIALS | 2016年 / 26卷 / 05期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

electric field effect; interfaces; orbital switches; TRANSITION; OCCUPANCY;

D O I：

10.1002/adfm.201504036

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The semiconductor industry has seen a remarkable miniaturization trend, where the size of microelectronic circuit components is expected to reach the scale of atom even subatom. Here, an orbital switch formed at the interface between BaTiO3 (BTO) and La0.5Sr0.5MnO3 (LSMO) is used to manipulate the electric field effect in the LSMO/BTO heterostructure. The orbital switch is based on the connection or breakdown of interfacial Ti-O-Mn bond due to the ferroelectric displacement under external electric field. This finding would pave the way for the tuning of the material performance or device operation at atomic level and introducing the orbital degree of freedom into the terrain of microelectronics.

引用

页码：753 / 759

页数：7

共 34 条

[1] CONTROLLED-VALENCE PROPERTIES OF LA1-XSRXFEO3 AND LA1-XSRXMNO3 STUDIED BY SOFT-X-RAY ABSORPTION-SPECTROSCOPY [J].

ABBATE, M ;

DEGROOT, FMF ;

FUGGLE, JC ;

FUJIMORI, A ;

STREBEL, O ;

LOPEZ, F ;

DOMKE, M ;

KAINDL, G ;

SAWATZKY, GA ;

TAKANO, M ;

TAKEDA, Y ;

EISAKI, H ;

UCHIDA, S .

PHYSICAL REVIEW B, 1992, 46 (08) :4511-4519

[2]

Bauer U, 2015, NAT MATER, V14, P174, DOI [10.1038/NMAT4134, 10.1038/nmat4134]

[3] Electric-field penetration into metals: Consequences for high-dielectric-constant capacitors [J].

Black, CT ;

Welser, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (04) :776-780

[4] Orbital reconstruction and covalent bonding at an oxide interface [J].

Chakhalian, J. ;

Freeland, J. W. ;

Habermeier, H.-U. ;

Cristiani, G. ;

Khaliullin, G. ;

van Veenendaal, M. ;

Keimer, B. .

SCIENCE, 2007, 318 (5853) :1114-1117

[5] Reversible Modulation of Orbital Occupations via an Interface-Induced Polar State in Metallic Manganites [J].

Chen, Hanghui ;

Qiao, Qiao ;

Marshall, Matthew S. J. ;

Georgescu, Alexandru B. ;

Gulec, Ahmet ;

Phillips, Patrick J. ;

Klie, Robert F. ;

Walker, Frederick J. ;

Ahn, Charles H. ;

Ismail-Beigi, Sohrab .

NANO LETTERS, 2014, 14 (09) :4965-4970

[6]

Chiba D, 2011, NAT MATER, V10, P853, DOI [10.1038/nmat3130, 10.1038/NMAT3130]

[7] ORIGIN OF FERROELECTRICITY IN PEROVSKITE OXIDES [J].

COHEN, RE .

NATURE, 1992, 358 (6382) :136-138

[8] Interplay of strain and magnetism in La1-xSrxMnO3 from first principles [J].

Colizzi, Giuseppe ;

Filippetti, Alessio ;

Cossu, Fabrizio ;

Fiorentini, Vincenzo .

PHYSICAL REVIEW B, 2008, 78 (23)

[9] Magnetoelectric Coupling Induced by Interfacial Orbital Reconstruction [J].

Cui, Bin ;

Song, Cheng ;

Mao, Haijun ;

Wu, Huaqiang ;

Li, Fan ;

Peng, Jingjing ;

Wang, Guangyue ;

Zeng, Fei ;

Pan, Feng .

ADVANCED MATERIALS, 2015, 27 (42) :6651-+

[10] Electrical Manipulation of Orbital Occupancy and Magnetic Anisotropy in Manganites [J].

Cui, Bin ;

Song, Cheng ;

Gehring, Gillian A. ;

Li, Fan ;

Wang, Guangyue ;

Chen, Chao ;

Peng, Jingjing ;

Mao, Haijun ;

Zeng, Fei ;

Pan, Feng .

ADVANCED FUNCTIONAL MATERIALS, 2015, 25 (06) :864-870

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