Structural and electrical characterization of gold nanoclusters in thin SiO2 films:: Realization of a nanoscale tunnel rectifier

被引：1
作者：
Ruffino, F.
Grimaldi, M. G.
机构：
[1] CNR, INFM, MATIS, I-95123 Catania, Italy
[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 03期
关键词：
gold; nanoclusters; metal-oxide-semiconductor structures; electron conduction; scanning probe microscopy;
D O I：
10.1016/j.mee.2006.10.090
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Conductive atomic force microscopy has been used to measure the I-V characteristics of nanometric An clusters embedded in a SiO2 film prepared by sputter deposition and low temperature annealing. Highly local asymmetric rectifier I-V characteristics were evidenced and modelled in terms of electrical transport through an asymmetric double barrier tunnel junction SiO2/Au cluster/SiO2. The threshold voltage depends strongly on the cluster size and barrier thickness according to the model given. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：532 / 537
页数：6
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