Model device parameters for a 10-Gb/s HEMT modulator driver IC

被引：0
作者：
Gao, JJ [1 ]
Gao, BX
Bo, P
Liang, CU
机构：
[1] Tsing Hua Univ, State Key Lab Microwave & Digital Commun, Beijing 100084, Peoples R China
[2] Hebei Semicond Res Inst, Hebei 050051, Peoples R China
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2002年 / 35卷 / 05期
关键词：
high-speed optoelectronic integrated circuit; driver IC; optical transmitters; HEMT device model parameters;
D O I：
10.1002/mop.10606
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents research on device parameters for a 2.5-10-Gb/s high electron mobility, transistor (HEMT) modulator driver IC. The effect of DC and capacitance parameters on the driver IC is discussed, and their ability to meet the requirements of the driver IC are calculated. The results shown agree with experimental data. (C) 2002 Wiley Periodicals, Inc.
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页码：357 / 360
页数：4
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