Low-power, low-phase noise SiGe HBT static frequency divider topologies up to 100 GHz

被引:0
|
作者
Laskin, E. [1 ]
Nicolson, S. T. [1 ]
Chevalier, P. [2 ]
Chantre, A. [2 ]
Sautreuil, B. [2 ]
Voinigescu, S. . P. [1 ]
机构
[1] Univ Toronto, Edward S Rogers Sr Dept ECE, Toronto, ON M5S 3G4, Canada
[2] STMicroelectron, Crolles, France
关键词
static frequency dividers; SiGeHBT;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Static 2:1 frequency dividers with different latch configurations were designed and fabricated in two SiGe HBT technologies. The self-oscillation and maximum operation frequency are found to be correlated with the f(MAX) but not with the f(T) of the technology. A self-oscillation frequency of 77 GHz, the highest among static dividers in SiGe HBT technology, is achieved with the lowest power consumption of 122 mW from 3.3 V supply. Phase noise measurements of the 100-GHz input and 50-GHz output signals indicate ideal behavior with no measurable noise contribution from the divider. All fabricated dividers feature an integrated single-ended-to-differential transformer for ease of testing, yet broadband 20 GHz-100 GHz operation is maintained.
引用
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页码:235 / +
页数:2
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