Evidence for random networks of diodes in thin films of LaVO3 on SrTiO3 substrates

被引：5
|
作者：
Razavi, F. S. [1 ]
Gharetape, S. Jamali [1 ]
Crandles, D. A. [1 ]
Christiani, G. [2 ]
Kremer, R. K. [2 ]
Habermeier, H. -U. [2 ]
机构：
[1] Brock Univ, Dept Phys, St Catharines, ON L2S 3A1, Canada
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期
基金：
加拿大自然科学与工程研究理事会;
关键词：
annealing; lanthanum compounds; semiconductor diodes; strontium compounds; thin films; TRANSITION; INSULATOR;
D O I：
10.1063/1.3293439
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly conducting interfaces of transition metal oxide heterolayers could provide a promising access to transition metal oxide based electronic devices similar to those based on semiconductor heterostructures. Recently, metallic conductivity has been reported at the LaAlO3/SrTiO3 heterointerface. Here we report the observation of diodelike behavior and the formation of a random diode network in thin films of LaVO3 deposited on as-polished SrTiO3 substrates. Depending on films annealing conditions we observed linear or nonlinear I-V characteristic below 50 K.
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页数：3
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