Evidence for random networks of diodes in thin films of LaVO3 on SrTiO3 substrates

被引：5

作者：

Razavi, F. S. ^{[1
]}

Gharetape, S. Jamali ^{[1
]}

Crandles, D. A. ^{[1
]}

Christiani, G. ^{[2
]}

Kremer, R. K. ^{[2
]}

Habermeier, H. -U. ^{[2
]}

机构：

[1] Brock Univ, Dept Phys, St Catharines, ON L2S 3A1, Canada

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

annealing; lanthanum compounds; semiconductor diodes; strontium compounds; thin films; TRANSITION; INSULATOR;

D O I：

10.1063/1.3293439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly conducting interfaces of transition metal oxide heterolayers could provide a promising access to transition metal oxide based electronic devices similar to those based on semiconductor heterostructures. Recently, metallic conductivity has been reported at the LaAlO3/SrTiO3 heterointerface. Here we report the observation of diodelike behavior and the formation of a random diode network in thin films of LaVO3 deposited on as-polished SrTiO3 substrates. Depending on films annealing conditions we observed linear or nonlinear I-V characteristic below 50 K.

引用

页数：3

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