AlGaInN based laser diodes

被引：19

作者：

Uchida, S ^{[1
]}

Kijima, S ^{[1
]}

Tojyo, T ^{[1
]}

Ansai, S ^{[1
]}

Takeya, M ^{[1
]}

Hino, T ^{[1
]}

Shibuya, K ^{[1
]}

Ikeda, S ^{[1
]}

Asano, T ^{[1
]}

Yanashima, K ^{[1
]}

Hashimoto, S ^{[1
]}

Asatsuma, T ^{[1
]}

Ozawa, M ^{[1
]}

Kobayashi, T ^{[1
]}

Yabuki, Y ^{[1
]}

Aoki, T ^{[1
]}

Ikeda, M ^{[1
]}

机构：

[1] Sony Shiroishi Semicond Inc, Dev Ctr, Shiroishi, Miyagi 9890734, Japan

来源：

IN-PLANE SEMICONDUCTOR LASERS IV | 2000年 / 3947卷

关键词：

D O I：

10.1117/12.382094

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The longer lifetime is desired for high power AlGaInN based violet lasers. We found that lifetime is strongly dependent on both the initial operating consumption power and the dislocation densities in the laser stripe. Pd/Pt/Au as a p-type ohmic metal and AlGaN/GaN superlattice as a p-type cladding layer were incorporated to reduce the operating voltage. The optimization of device parameters as well as the stripe width and the RIE etching depth led to the lower threshold current of 3.4 kA/cm(2). We used the Pendeo epitaxy technique to get lower dislocation density similar to 10(7) cm(-2). The LDs with these technologies showed an output power as high as 35mW under room temperature CW condition without kink. The lifetime is more than 500 hours under CW operation with a constant power of 20mW at 25 degrees C.

引用

页码：156 / 164

页数：9

共 50 条

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