Modelling temperature effects of quarter micrometre MOSFETs in BSIM3v3 for circuit simulation

被引：49

作者：

Cheng, YH

Imai, K

Jeng, MC

Liu, ZH

Chen, K

Hu, CM

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] NEC CORP LTD,ULSI DEVICE DEV LABS,SAGAMIHARA,KANAGAWA 229,JAPAN

[3] CADENCE DESIGN SYST,SAN JOSE,CA 95134

[4] BTA TECHNOL INC,SANTA CLARA,CA 95054

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 11期

关键词：

D O I：

10.1088/0268-1242/12/11/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the temperature modelling in BSIM3v3 (Berkeley Short-channel IGFET Model version 3), and comparison with measured data for both n- and p-channel devices with a channel length down to a quarter of a micrometre from room temperature up to 150 degrees C. I-V, G(m) and G(ds) are modelled with the temperature dependences of mobility, threshold voltage, saturation velocity and series resistance.

引用

页码：1349 / 1354

页数：6

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