Modelling temperature effects of quarter micrometre MOSFETs in BSIM3v3 for circuit simulation

被引:49
作者
Cheng, YH
Imai, K
Jeng, MC
Liu, ZH
Chen, K
Hu, CM
机构
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
[2] NEC CORP LTD,ULSI DEVICE DEV LABS,SAGAMIHARA,KANAGAWA 229,JAPAN
[3] CADENCE DESIGN SYST,SAN JOSE,CA 95134
[4] BTA TECHNOL INC,SANTA CLARA,CA 95054
关键词
D O I
10.1088/0268-1242/12/11/004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the temperature modelling in BSIM3v3 (Berkeley Short-channel IGFET Model version 3), and comparison with measured data for both n- and p-channel devices with a channel length down to a quarter of a micrometre from room temperature up to 150 degrees C. I-V, G(m) and G(ds) are modelled with the temperature dependences of mobility, threshold voltage, saturation velocity and series resistance.
引用
收藏
页码:1349 / 1354
页数:6
相关论文
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