Impacts of the MTCMOS Technology on Power Supply Network: a Full-chip Perspective

被引：0

作者：

Shi, Jin ^{[1
]}

Cai, Yici ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Comp Sci & Technol, EDA Lab, Beijing 100084, Peoples R China

来源：

2009 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS PROCEEDINGS, VOLUMES I & II: COMMUNICATIONS, NETWORKS AND SIGNAL PROCESSING, VOL I/ELECTRONIC DEVICES, CIRUITS AND SYSTEMS, VOL II | 2009年

关键词：

D O I：

10.1109/ICCCAS.2009.5250338

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Multi-threshold CMOS(MTCMOS) has been developed as one of the most efficient techniques to reduce leakage power. However, sleep transistor insertion might impose problems on power supply network design. We studied IR-drop variance by sleep transistor insertion at the full-chip level. Our work covered different modes, structures and tapping patterns. We identified in most cases the varied current distribution can be balanced locally well. Besides, "rush current" can have large and wide impacts.

引用

页码：996 / 999

页数：4

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