Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

被引：215

作者：

Masui, Hisashi ^{[1
]}

Nakamura, Shuji ^{[1
]}

DenBaars, Steven P. ^{[1
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Solid State Lighting & Energy Ctr, Santa Barbara, CA 93106 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 01期

关键词：

Light-emitting diodes (LEDs); optical polarization; piezoelectricity; quantum well (QW) devices; semiconductor epitaxial layers; A-PLANE GAN; EPITAXIAL LATERAL OVERGROWTH; OPTICAL-PROPERTIES; HIGH-POWER; INGAN SINGLE; GROWTH; BLUE; EMISSION; FILMS; GREEN;

D O I：

10.1109/TED.2009.2033773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It has been several years since InGaN/GaN light-emitting diodes (LEDs) on nonpolar and semipolar orientations were first demonstrated. Prominent performance and inherent potential of these crystallographic orientations have been revealed as bulk-GaN substrates of arbitrary orientations became available for epitaxial device growth. At this point in time, we intend to survey the progress made to date and prospect the future requirements for further device improvements. The discussion begins with a historical background: how nonpolar/semipolar orientations were introduced to III-nitride LEDs and why they are beneficial. The discussion then provides information on elementary crystallography and piezoelectricity in addition to the electronic band structure of wurtzite crystals. Later in this paper, LED reports are collected to develop comprehensive knowledge of the past research efforts and trends. Nonpolar and semipolar orientations provide not only high LED performances, e. g., optical output power and wavelength ranges, but also unique functions, e. g., polarized light emission, which will explore new fields of applications.

引用

页码：88 / 100

页数：13

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