Pine shaped InN nanostructure growth via vapour transport method by own shadowing and infrared detection

被引：6

作者：

Dwivedi, Shyam Murli Manohar Dhar ^{[1
]}

Chakrabartty, Shubhro ^{[1
]}

Ghadi, Hemant ^{[2
]}

Murkute, Punam ^{[2
]}

Chavan, Vinayak ^{[2
]}

Chakrabarti, Subhananda ^{[2
]}

Bhunia, Satyaban ^{[3
]}

Mondal, Aniruddha ^{[1
]}

机构：

[1] Natl Inst Technol Durgapur, Dept Phys, Durgapur 713209, W Bengal, India

[2] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

[3] Saha Inst Nucl Phys, Surface Phys & Mat Sci Div, Kolkata 700064, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 722卷

关键词：

Oblique angle deposition (OAD) technique; InN; Nanopines (N Pi s); Infrared detector; CARRIER CONCENTRATION; LANDAU-LEVELS; NITRIDE; DEPOSITION; NANOWIRES; NANORODS;

D O I：

10.1016/j.jallcom.2017.06.184

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have demonstrated the synthesis of Indium Nitride (InN) Nanopines (N Pi s) array on Si substrate using Oblique Angle Deposition (OAD) technique. The deposited InN N.s have an average height of similar to 2 mu m. The grown InN N.s are hexagonal in nature and have prominent diffraction peak along < 002 > orientation. The X-ray photoelectron spectroscopy (XPS) measurement confirms the presence of IneN bonds. An Optical absorption spectroscopy reveals high band gap absorption at approximately 1.15 eV. The carrier concentration of (similar to 1.8 x 10(20) cm(-3)) was determined using capacitance (C) e voltage (V) measurement. The infrared detection with maximum responsivity at 1.14 eV (similar to 1078 nm) was obtained near the optical band edge at 10 K. A low device sensitivity was observed with an increasing operating temperature. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：872 / 877

页数：6

共 37 条

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