Observation of coherent surface optical phonon oscillations by time-resolved surface second-harmonic generation

被引:95
作者
Chang, YM
Xu, L
Tom, HWK
机构
[1] Department of Physics, University of California, Riverside, CA
关键词
D O I
10.1103/PhysRevLett.78.4649
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We demonstrate a new time-domain surface phonon spectroscopy. We excite coherent surface optical phonons with an ultrashort laser pulse and probe the free-induction decay with time-resolved surface second-harmonic generation. For both clean GaAs (110) and (100) surfaces, the signals are remarkably large due to the highly localized electron-phonon interaction at the surface and the intrinsic-surface sensitivity of second-harmonic generation. This work suggests that coherent oscillations of surface optical phonons may be used as probes of electron-phonon interactions at surfaces and to control or drive nonthermal surface chemical reactions.
引用
收藏
页码:4649 / 4652
页数:4
相关论文
共 19 条
[1]  
CHENG TK, 1991, APPL PHYS LETT, V58, P980
[2]   SUBPICOSECOND TIME-RESOLVED COHERENT-PHONON OSCILLATIONS IN GAAS [J].
CHO, GC ;
KUTT, W ;
KURZ, H .
PHYSICAL REVIEW LETTERS, 1990, 65 (06) :764-766
[3]   SURFACE PHONONS IN GAAS(110) [J].
DOAK, RB ;
NGUYEN, DB .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1987, 44 :205-214
[4]   SURFACE OPTICAL PHONONS AND HYDROGEN CHEMISORPTION ON POLAR AND NON-POLAR FACES OF GAAS, INP, AND GAP [J].
DUBOIS, LH ;
SCHWARTZ, GP .
PHYSICAL REVIEW B, 1982, 26 (02) :794-802
[5]   ELECTRONIC-PROPERTIES OF SB MONOLAYERS ON III-V(110) SURFACES DETERMINED BY RESONANCE RAMAN-SCATTERING [J].
ESSER, N ;
KOPP, M ;
HAIER, P ;
KELNBERGER, A ;
RICHTER, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04) :1481-1485
[6]   AB-INITIO CALCULATION OF SURFACE PHONONS IN GAAS(110) [J].
FRITSCH, J ;
PAVONE, P ;
SCHRODER, U .
PHYSICAL REVIEW LETTERS, 1993, 71 (25) :4194-4197
[7]  
FUCHS EP, 1965, PHYS REV, V140, pA2076
[8]   DYNAMIC STRAIN AT SEMICONDUCTOR INTERFACES - STRUCTURE AND SURFACE-ATOM VIBRATIONS OF GAAS(110) AND GAAS(110)-P(1X1)-SB [J].
GODIN, TJ ;
LAFEMINA, JP ;
DUKE, CB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2282-2289
[9]   SURFACE PHONONS ON GAAS(110) MEASURED BY INELASTIC HELIUM ATOM SCATTERING [J].
HARTEN, U ;
TOENNIES, JP .
EUROPHYSICS LETTERS, 1987, 4 (07) :833-838
[10]   Electronic, structural, and dynamical properties of the GaAs(110):Ge surface [J].
Honke, R ;
Fritsch, J ;
Pavone, P ;
Schroder, U .
PHYSICAL REVIEW B, 1996, 53 (15) :9923-9929