Electron mobility on AlGaN/GaN heterostructure interface

被引：14
作者：
Zhao, GY
Ishikawa, H
Egawa, T
Jimbo, T
Umeno, M
机构：
[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] Nagoya Inst Technol, Res Ctr Microstruct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan
[3] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2000年 / 7卷 / 3-4期
关键词：
AlGaN/GaN; 2DEG; mobility; PL; C-V;
D O I：
10.1016/S1386-9477(00)00097-7
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
High-quality AlGaN/GaN heterostructure with different Al compositions have been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire. Photoluminescence spectra exhibit very strong recombination related to the two-dimensional electron gas (2DEG), which is dominated at higher Al composition. The unintentionally doped Al(0.11)Ga(0.89)N/GaN heterostructure shows the highest Hall mobility of 11 823 cm(2)/Vs at 5 K. In addition, we realized that the quality of interface can be improved with increasing AlGaN layer thickness, and Hall mobility will be enhanced. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：963 / 966
页数：4
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