Electrochemical growth and resistive switching of flat-surfaced and (111)-oriented Cu2O films

被引：34

作者：

Kang, Sung-Oong ^{[1
]}

Hong, Sahwan ^{[1
]}

Choi, Jinsik ^{[1
]}

Kim, Jin-Soo ^{[1
]}

Hwang, Inrok ^{[1
]}

Byun, Ik-Su ^{[1
]}

Yun, Kyu-Sik ^{[2
]}

Park, Bae Ho ^{[1
]}

机构：

[1] Konkuk Univ, Dept Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea

[2] Kyungwon Univ, Coll Bionano Technol, Songnam 461701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 09期

基金：

瑞典研究理事会;

关键词：

EPITAXIAL ELECTRODEPOSITION; OXIDE; TRANSITION; COPPER;

D O I：

10.1063/1.3202394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Flat-surfaced and fully (111)-oriented Cu2O films were grown through a chelate-assisted electrochemical approach. Based on key roles of chelating agent, the flat surface of films controlled over the columnar-grained growth was obtainable with a root-mean-square roughness value below 3 nm. Cu2O films treated by a rapid-thermal-annealing process at 200 degrees C exhibited unipolar switching I-V characteristics, presenting the bistable resistance states with a high resistance ratio (R-off/R-on) over 3 orders of magnitude and considerably stable switching properties within 100 switching cycles. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3202394]

引用

页数：3

共 21 条

[1] Epitaxial electrodeposition of copper(I) oxide on single-crystal copper [J].

Barton, JK ;

Vertegel, AA ;

Bohannan, EW ;

Switzer, JA .

CHEMISTRY OF MATERIALS, 2001, 13 (03) :952-959

[2] Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications [J].

Chang, Wen-Yuan ;

Lai, Yen-Chao ;

Wu, Tai-Bor ;

Wang, Sea-Fue ;

Chen, Frederick ;

Tsai, Ming-Jinn .

APPLIED PHYSICS LETTERS, 2008, 92 (02)

[3] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[4] Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures [J].

Dong, R. ;

Lee, D. S. ;

Xiang, W. F. ;

Oh, S. J. ;

Seong, D. J. ;

Heo, S. H. ;

Choi, H. J. ;

Kwon, M. J. ;

Seo, S. N. ;

Pyun, M. B. ;

Hasan, M. ;

Hwang, Hyunsang .

APPLIED PHYSICS LETTERS, 2007, 90 (04)

[5] General route to vertical ZnO nanowire arrays using textured ZnO seeds [J].

Greene, LE ;

Law, M ;

Tan, DH ;

Montano, M ;

Goldberger, J ;

Somorjai, G ;

Yang, PD .

NANO LETTERS, 2005, 5 (07) :1231-1236

[6] Probing Bose-Einstein condensation of excitons with electromagnetic radiation [J].

Johnsen, K ;

Kavoulakis, GM .

PHYSICAL REVIEW LETTERS, 2001, 86 (05) :858-861

[7] Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films [J].

Kim, Kyung Min ;

Choi, Byung Joon ;

Shin, Yong Cheol ;

Choi, Seol ;

Hwang, Cheol Seong .

APPLIED PHYSICS LETTERS, 2007, 91 (01)

[8] SrCu2O2:: A p-type conductive oxide with wide band gap [J].

Kudo, A ;

Yanagi, H ;

Hosono, H ;

Kawazoe, H .

APPLIED PHYSICS LETTERS, 1998, 73 (02) :220-222

[9] Resistive switching memory effect of ZrO2 films with Zr+ implanted [J].

Liu, Qi ;

Guan, Weihua ;

Long, Shibing ;

Jia, Rui ;

Liu, Ming ;

Chen, Junning .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[10] Copper oxide thin films prepared by chemical vapor deposition from copper dipivaloylmethanate [J].

Maruyama, T .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1998, 56 (01) :85-92

← 1 2 3 →