Fabrication of Stretch-Oriented Regioregular Poly(3-Hexylthiophene) film and Its Application to Organic Field-Effect Transistors

被引:18
作者
Yasuda, Takeshi [1 ,2 ]
Han, Liyuan [3 ]
Tsutsui, Tetsuo [4 ]
机构
[1] Natl Inst Mat Sci, Exploratory Mat Res Lab Energy & Environm, Tsukuba, Ibaraki 3050047, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Chiyoda Ku, Tokyo 1020075, Japan
[3] Natl Inst Mat Sci, Adv Photovolta Ctr, Tsukuba, Ibaraki 3050047, Japan
[4] Kyushu Univ, Inst Mat Chem & Engn, Fukuoka 8168580, Japan
关键词
poly(3-hexylthiophene); stretch-oriented film; anisotropic carrier transport; organic field-effect transistor; CHARGE-TRANSPORT; HIGH-MOBILITY; THIN-FILMS;
D O I
10.2494/photopolymer.22.713
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
We report a fabrication process for organic field-effect transistors (OFETs) based on stretch-oriented regioregular poly(3-hexylthiophene) (rr-P3HT) film and the anisotropic carrier transport properties in the OFETs. The optical absorption spectra and XRD results indicate that pi-conjugated rr-P3HT chains are aligned in the stretching direction with the pi-stacking polymer planes parallel to the substrate. The field-effect hole mobility in a current flow parallel to the stretching direction is larger by a factor of 3.4 compared to that perpendicular to the stretching direction. These results indicate that charge transport via the pi-conjugated rr-P3HT chains is advantageous in the stretch-oriented rr-P3HT film.
引用
收藏
页码:713 / 717
页数:5
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