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STONEHAM EB, IN PRESS 2006 EUR MI
A high-performance 14.4 to 19.7 GHz power detector fabricated with flip-chip technology
被引：0
作者：
Zeeb, David M.
机构：
来源：
2006 European Microwave Conference, Vols 1-4
|
2006年
关键词：
flip-chip devices;
microwave detectors;
microwave integrated circuits;
MODFETs;
passive circuits;
Schottky diodes;
D O I：
暂无
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
A rugged flip-chip technology with potential for low cost at high manufacturing volume was employed to fabricate a power detector using mixed device technologies. The circuit consists of one discrete GaAs pHEMT chip and one GaAs dual-Schottky-diode chip ffip-attached to a 3.5 mm by 2.1 mm substrate containing only passive circuitry. The power detector offers two different modes of operation to enable compensation for drift of the detector diode response over temperature.
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页码：1692 / 1695
页数：4
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