Measurement of effective electron mass in biaxial tensile strained silicon on insulator

被引：24

作者：

Feste, S. F. ^{[1
,2
]}

Schaepers, Th. ^{[1
,2
]}

Buca, D. ^{[1
,2
]}

Zhao, Q. T. ^{[1
,2
]}

Knoch, J. ^{[3
]}

Bouhassoune, M. ^{[4
]}

Schindlmayr, Arno ^{[4
]}

Mantl, S. ^{[1
,2
]}

机构：

[1] FZ Julich GmbH, Inst Bio & Nanosyst IBN1, D-52425 Julich, Germany

[2] FZ Julich GmbH, JARA FIT Fundamentals Future Informat Technol, D-52425 Julich, Germany

[3] TU Dortmund Univ, Micro & Nanoelect Devices Grp, D-44227 Dortmund, Germany

[4] Univ Paderborn, Dept Phys, D-33095 Paderborn, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 18期

关键词：

density functional theory; effective mass; MOSFET; Shubnikov-de Haas effect; silicon-on-insulator; SPACE-TIME METHOD; GAS; SYSTEMS;

D O I：

10.1063/1.3254330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov-de Haas oscillations in the temperature range of T=0.4-4 K for magnetic fields of B=0-10 T were measured. The effective electron mass in SSOI and SOI samples was determined as m(t)=(0.20 +/- 0.01)m(0). This result is in excellent agreement with first-principles calculations of the effective electron mass in the presence of strain.

引用

页数：3

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