Fabrication and electrical properties of sol-gel-derived Ba0.8Sr0.2TiO3 ferroelectric films from a 0.05-M spin-on solution

被引：15

作者：

Cheng, JG ^{[1
]}

Meng, XJ ^{[1
]}

Tang, J ^{[1
]}

Guo, SL ^{[1
]}

Chu, JH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 70卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1007/s003390051058

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Barium strontium titanate (Ba0.8Sr0.2TiO3) films with good ferroelectricity have been obtained by a developed sol-gel processing, using a 0.05-M spin-on solution. X-ray diffraction and Raman spectroscopy investigations showed that the Ba0.8ST0.2TiO3 film exhibited a tetragonal structure at room temperature. Field-emission scanning electron microscopy measurements revealed that large columnar grains with the size of 100 to 200nm in the film were formed from the highly dilute spin-on solution with layer-by-layer homoepitaxy. Electrical measurements for the prepared Ba0.8Sr0.2TiO3 film showed a remnant polarization of 3.5 mu C/cm(2), a coercive field of 53 kV/cm, two distinctive phase transitions, lower dissipation factor, and good insulating properties. These results indicate the sol-gel-derived Ba0.8Sr0.2TiO3 film from a 0.05-M solution is suitable for uncooled infrared detector applications.

引用

页码：411 / 414

页数：4

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[21] Optical properties of thin epitaxial Ba0.8Sr0.2TiO3 films [J].

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