Design Guidelines for Recessed Schottky Barrier AlN/GaN Diode for THz Applications

In this work, we have explored the design space for multifinger planar Schottky barrier diodes (SBDs) using AlN/GaN heterostructure for terahertz (THz) applications. Using a well-calibrated computational modeling framework, we have identified the critical design parameters and associated parasitic elements affecting diode's THz performance. The 3-D modeling of parasitics components has been deployed as the 2-D design approach overestimates the performanceor underestimates the parasiticcomponents in a multifinger design. Device design guidelines and the tradeoff between various parameters are discussed in detail. The optimum design space and related tradeoffs were found to be nonintuitive due to the presence of 3-D parasitics capacitances and resistances.