Colossal permittivity of (Mg plus Nb) co-doped TiO2 ceramics with low dielectric loss

被引:130
作者
Yang, Chao [1 ]
Tse, Mei-Yan [2 ]
Wei, Xianhua [1 ]
Hao, Jianhua [2 ]
机构
[1] Southwest Univ Sci & Technol, State Key Lab Cultivat Base Nonmetal Composites &, Mianyang 621010, Peoples R China
[2] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
关键词
RUTILE TIO2; ELECTRONIC-STRUCTURE; SINGLE-CRYSTAL; PERFORMANCE; SPECTROSCOPY; TRANSITION; CONSTANT; BOUNDARY; BEHAVIOR; PBTIO3;
D O I
10.1039/c7tc01020f
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A high dielectric loss is one of the difficulties that hinder the application of colossal permittivity (CP) materials. Here we report the CP behaviors in ceramics of rutile (Mg + Nb) co-doped TiO2, i.e., (Mg1/3Nb2/3)(x)Ti1-xO2. The room-temperature dielectric properties of the pure homogenous ceramics include a relatively high CP (>10(4)) and an acceptable dielectric loss (<0.1) at frequencies from 10(2) to 10(5) Hz in the doping concentration range of 0.5% to 7%. In particular, an excellent low dielectric loss of 0.0083 and a high dielectric permittivity of 3.87 x 10(4) at 1 kHz were obtained for the 1% doped sample. Moreover, the temperature stability (room temperature similar to 180 degrees C) and frequency stability (10(2)-10(5) Hz) of the CP properties were studied. X-ray photoelectron spectroscopy suggests that the superior CP properties could be explained by the electron-pinned defect-dipole mechanism.
引用
收藏
页码:5170 / 5175
页数:6
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