Design and Performance of a J Band MEMS Switch

被引：5

作者：

Zhang, Naibo ^{[1
]}

Yan, Ze ^{[2
]}

Song, Ruiliang ^{[1
]}

Wang, Chunting ^{[1
]}

Guo, Qiuquan ^{[3
]}

Yang, Jun ^{[3
]}

机构：

[1] China Elect Sci & Technol Grp Corp, Res Inst 54, Beijing 100070, Peoples R China

[2] Beihang Univ, Beijing 100083, Peoples R China

[3] Univ Western Ontario, Dept Mech & Mat Engn, London, ON N6A 3K7, Canada

来源：

MICROMACHINES | 2019年 / 10卷 / 07期

基金：

中国国家自然科学基金;

关键词：

J band; MEMS; switch;

D O I：

10.3390/mi10070467

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

This paper presents a novel J band (220-325 GHz) MEMS switch design. The equivalent circuits, the major parameters, capacitance, inductance and resistance in the circuit were extracted and calculated quantitatively to carry out the radio frequency analysis. In addition, the mechanical property of the switch structure is analyzed, and the switching voltage is obtained. With the designed parameters, the MEMS switch is fabricated. The measurement results are in good agreement with simulation results, and the switch is actuated under a voltage of similar to 30 V. More importantly, the switch has achieved a low insertion loss of similar to 1.2 dB at 220 GHz and <similar to 4 dB from 220 GHz to 270 GHz in the "UP" state, and isolation of similar to 16 dB from 220 GHz to 320 GHz in the "DOWN" state. Such switch shows great potential in the integration for terahertz components.

引用

页数：9

共 16 条

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