Constitutive response of passivated copper films to thermal cycling

被引:45
作者
Shen, YL [1 ]
Ramamurty, U
机构
[1] Univ New Mexico, Dept Mech Engn, Albuquerque, NM 87131 USA
[2] Indian Inst Sci, Dept Met, Bangalore 560012, Karnataka, India
关键词
D O I
10.1063/1.1535731
中图分类号
O59 [应用物理学];
学科分类号
摘要
The thermomechanical behavior of passivated thin copper films is studied. Stresses in copper films of thickness ranging from 125 to 1000 nm, deposited on quartz or silicon substrates and passivated with silicon oxide, were measured using the curvature method. The thermal cycling spans a temperature range from -196 to 600degreesC. The measured mechanical behavior was found to be rate insensitive within the heating/cooling rate range of 5-25degreesC/min. It was observed that the passivated films do not exhibit a significant stress relaxation at elevated temperatures that is normally found in unpassivated films. Furthermore, a significant strain hardening during the course of thermal loading was noted. Simple continuum plasticity analyses show that the experimentally measured stress-temperature response can only be, rationalized with a kinematic hardening model. Analytical procedures for extracting the constitutive properties of the films that were developed on the basis of such a model are presented. The initial yield strength is higher and tends to be less temperature dependent in thinner films. The strain hardening rate is found to increase with decreasing film thickness. 2003 American Institute of Physics. [DOI: 10.1063/1.1535731].
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页码:1806 / 1812
页数:7
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