Realization of a SOI-like III-V platform based on the integration of GaAs with silicon

被引：0

作者：

Sharma, Rajat ^{[1
]}

Lin, Hung-Hsi ^{[1
]}

Puckett, Matthew W. ^{[1
]}

Fainman, Yeshaiahu ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, 9500 Gilman Dr, La Jolla, CA 92023 USA

来源：

2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2015年

关键词：

WAVE-GUIDES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the integration of gallium arsenide with silicon to create a SOI-like platform capable of exploiting the optical properties of III-V materials. We fabricate nanoscale waveguides and design Bragg gratings on this new platform.

引用

页数：2

共 5 条

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[4] Tensor of the second-order nonlinear susceptibility in asymmetrically strained silicon waveguides: analysis and experimental validation
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[J]. OPTICS LETTERS, 2014, 39 (06) : 1693 - 1696
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