Morphological evolution and lateral ordering of uniform SiGe/Si(001) islands

被引：11

作者：

Stoffel, M. ^{[1
]}

Rastelli, A. ^{[1
]}

Merdzhanova, T. ^{[1
]}

Kar, G. S. ^{[1
]}

Schmidt, O. G. ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 12期

关键词：

SiGe islands; atomic force microscopy; facets; lateral ordering;

D O I：

10.1016/j.mejo.2006.05.025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By investigating the morphological evolution during epitaxial growth of Ge on Si(001) substrates, we find that highly uniform distributions of islands can be obtained. The islands are no longer domes but they consist of barns, which are bounded by steeper facets. A detailed morphological analysis indicates the presence of facets at their base, which are not stable for Ge but for Si. Finally, we show that long-range ordering of highly uniform SiGe barns can be obtained when the growth is performed on patterned Si(0 0 1) substrates. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：1528 / 1531

页数：4

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