Modeling ferroelectric capacitor switching using a parallel-elements model

被引：17

作者：

Jiang, B ^{[1
]}

Lee, JC ^{[1
]}

Zurcher, P ^{[1
]}

Jones, RE ^{[1
]}

机构：

[1] MOTOROLA INC,MAT RES & STRATEG TECHNOL,AUSTIN,TX 78712

来源：

INTEGRATED FERROELECTRICS | 1997年 / 16卷 / 1-4期

关键词：

D O I：

10.1080/10584589708013042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The charge-voltage (Q-V) relationship of ferroelectric capacitors experiencing arbitrary applied voltages is investigated both theoretically and experimentally. The complex behavior and history dependence of a ferroelectric capacitor in response to arbitrary voltage patterns can be well described by a parallel-elements model. This approach not only describes all of the major properties of ferroelectric hysteresis but is also very easy to implement into existing circuit design/simulation tools.

引用

页码：199 / 208

页数：10

共 6 条

[1]

DUNN DE, 1994, IEEE T ULTRASON FERR, V41, P3

[2]

EVANS JT, UNPUB FERROELECTRIC

[3] A CIRCUIT MODEL FOR A THIN-FILM FERROELECTRIC MEMORY DEVICE [J].