Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbide

被引：1
|
作者：
Korolkov, O [1 ]
Rang, T [1 ]
机构：
[1] TTU, Dept Elect, EE-19086 Tallinn, Estonia
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
diffusion welding; Schottky contacts; SiC substrates; specific contact resistance; structural defects;
D O I：
10.4028/www.scientific.net/MSF.389-393.941
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The results of experimental investigations of diffusion welded large area Al/SiC contacts are presented. The specific contact resistance is determined for Al/6H- and 4H-SiC. The particular importance of inflatness and non-parallelism for diffusion welding process is shown. The influence of imperfections and structural defects of SiC structures on reverse characteristics is discussed.
引用
收藏
页码：941 / 944
页数：4
相关论文
共 50 条
  • [21] The nucleation of polytype inclusions during the sublimation growth of 6H and 4H silicon carbide
    Sanchez, E.K.
    Kopec, A.
    Poplawski, S.
    Ware, R.
    Holmes, S.
    Wang, S.
    Timmerman, A.
    Materials Science Forum, 2002, 389-393 (01) : 71 - 74
  • [22] Low-dose aluminum and boron implants in 4H and 6H silicon carbide
    Saks, NS
    Agarwal, AK
    Ryu, SH
    Palmour, JW
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (06) : 2796 - 2805
  • [23] Damage evolution and recovery in 4H and 6H silicon carbide irradiated with aluminum ions
    Weber, WJ
    Jiang, W
    Zhang, Y
    Hallén, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 191 : 514 - 518
  • [24] Dopant activation and surface morphology of ion implanted 4H and 6H silicon carbide
    Capano, MA
    Ryu, S
    Melloch, MR
    Cooper, JA
    Buss, MR
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) : 370 - 376
  • [25] Neutral silicon vacancy in 6H and 4H SiC
    Sorman, E.
    Chen, W.M.
    Son, N.T.
    Hallin, C.
    Lindstrom, J.L.
    Monemar, B.
    Janzen, E.
    Materials Science Forum, 1998, 264-268 (pt 1): : 473 - 476
  • [26] The neutral silicon vacancy in 6H and 4H SiC
    Sorman, E
    Chen, WM
    Son, NT
    Hallin, C
    Lindstrom, JL
    Monemar, B
    Janzen, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 473 - 476
  • [27] Structure refinement of the silicon carbide polytypes 4H and 6H:: unambiguous determination of the refinement parameters
    Bauer, A
    Reischauer, P
    Kräusslich, J
    Schell, N
    Matz, W
    Goetz, K
    ACTA CRYSTALLOGRAPHICA SECTION A, 2001, 57 : 60 - 67
  • [28] Some aspects of the photoluminescence and Raman spectroscopy of (101¯0)- and (112¯0)- oriented 4H and 6H silicon carbide
    Ivanov, I.G.
    Henry, A.
    Hallin, C.
    Egilsson, T.
    Janzen, E.
    Materials Science Forum, 1998, 264-268 (pt 1): : 469 - 472
  • [29] Infrared reflection spectroscopy of as-anodized and passivated 6H and 4H porous silicon carbide
    Spanier, JE
    Herman, IP
    MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, 1998, 486 : 317 - 322
  • [30] A study of the anisotropic electron transport in 4H and 6H silicon carbide by Monte Carlo simulation
    Hjelm, M
    Nilsson, HE
    Käckell, P
    Persson, C
    Sannemo, U
    Petersson, CS
    PHYSICA SCRIPTA, 1999, T79 : 42 - 45
12345