Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbide

被引：1
|
作者：
Korolkov, O [1 ]
Rang, T [1 ]
机构：
[1] TTU, Dept Elect, EE-19086 Tallinn, Estonia
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
diffusion welding; Schottky contacts; SiC substrates; specific contact resistance; structural defects;
D O I：
10.4028/www.scientific.net/MSF.389-393.941
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The results of experimental investigations of diffusion welded large area Al/SiC contacts are presented. The specific contact resistance is determined for Al/6H- and 4H-SiC. The particular importance of inflatness and non-parallelism for diffusion welding process is shown. The influence of imperfections and structural defects of SiC structures on reverse characteristics is discussed.
引用
收藏
页码：941 / 944
页数：4
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