Fabrication of α-SiC heteroepitaxial films by YAG-PLAD method

被引：6

作者：

Muto, H ^{[1
]}

Kusumori, T ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol AIST Chubu, Moriyama Ku, Nagoya, Aichi 4638560, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

heteroepitaxial film; pulsed-laser ablation; RHEED; X-ray diffraction; alpha-SiC;

D O I：

10.4028/www.scientific.net/MSF.389-393.371

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth of alpha-SiC crystalline films has been investigated by pulsed laser ablation-deposition using the 4(th) harmonic of the Nd:YAG laser and 6H alpha-SiC targets. It was found that (0001) oriented films of 6H alpha-SiC can be grown hetero-epitaxially at similar to1200 degreesC on sapphire (0001) and Si(I 11) substrate planes, which have the same C-6 symmetry as alpha-SiC. These results provide not only preparation techniques for alpha-SiC epitaxial films as wafers but also may offer an alternative SiC device processing at low temperatures.

引用

页码：371 / 374

页数：4

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