Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots

被引：15
作者：
Jung, S. I.
Yeo, H. Y.
Yun, I.
Leem, J. Y.
Han, I. K.
Kim, J. S.
Lee, J. I. [1 ]
机构：
[1] KRISS, Nano Surface Grp, Taejon 305340, South Korea
[2] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
[3] InJe Univ, Inst Nanotechnol Applicat, Sch Nano Engn, Kimhae 621749, South Korea
[4] KIST, Nano Devices Res Ctr, Seoul 136791, South Korea
[5] ETRI, Basic Res Lab, Taejon 305350, South Korea
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 33卷 / 01期
关键词：
quantum dots; InAs; bimodal size distribution; photoluminescence;
D O I：
10.1016/j.physe.2006.03.150
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：280 / 283
页数：4
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