Si segregation in polycrystalline Co2MnSi films with grain-size control

被引：17

作者：

Hirohata, A. ^{[1
]}

Ladak, S. ^{[2
]}

Aley, N. P. ^{[2
]}

Hix, G. B. ^{[3
]}

机构：

[1] Univ York, Dept Elect, York YO10 5DD, N Yorkshire, England

[2] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

[3] Nottingham Trent Univ, Nottingham NG1 4BU, England

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 25期

关键词：

D O I：

10.1063/1.3276073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to characterize the interface/surface properties of polycrystalline Co2MnSi Heusler alloy films, grain-size evolution with increasing annealing time has been investigated. Here, samples with nanometer-scale grains have been prepared by our specially-designed sputtering system in order to maximize the interface/surface area. Our well-controlled grains clearly show Si phase segregation. This Si phase becomes conductive near room temperature and may be responsible for the significant decrease in tunneling magnetoresistance previously reported by [Wang et al., Appl. Phys. Lett. 93, 122506 (2008)]. (C) 2009 American Institute of Physics. [doi:10.1063/1.3276073]

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页数：3

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