Al2O3:Er3+ as a New Platform for Active Integrated Optics

被引:0
作者
Pollnau, M. [1 ]
Bradley, J. D. B. [1 ]
Agazzi, L. [1 ]
Bernhardi, E. [1 ]
Ay, F. [1 ]
Woerhoff, K. [1 ]
de Ridder, R. M. [1 ]
机构
[1] Univ Twente, Integrated Opt MicroSyst Grp, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
来源
ICTON: 2009 11TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOLS 1 AND 2 | 2009年
关键词
aluminum oxide; erbium-doped materials; optical amplifier; channel waveguide; Bragg grating; Integrated optics; WAVE-GUIDES; FABRICATION;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533 run peak gain of 2.0 dB/cm in Al(2)O(3):EP(3+) channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of > 20 dB throughout the entire telecom C-band for optimized waveguide lengths. Data transmission of 40 Gbit/s has been obtained. Grating structures for on-chip integrated cavities and distributed-feedback lasers have been fabricated in this material and are currently under investigation.
引用
收藏
页码:1253 / 1256
页数:4
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