Metastability effects in InGaP solar cells

被引：0

作者：

Sun, GC

Bourgoin, JC

de Angelis, N

Yamaguchi, M

Khan, A

Takamoto, T

Gilard, O

机构：

[1] Univ Paris 06, Lab Milieux Desordonnes & Heterogenes, CNRS UMR 7603, F-75252 Paris 05, France

[2] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan

[3] Japan Energy Corp, Cent Res Lab, Toda, Saitama 335, Japan

[4] Ctr Natl Etud Spatiales, DTS, AQ, QCPICE, F-31401 Toulouse 4, France

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 75卷 / 1-2期

关键词：

solar cell; ingap; metastability; DX center;

D O I：

10.1016/S0927-0248(02)00181-2

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The electrical characteristics of InGaP n(+)/p/p(+), solar cells are unstable under illumination below typically 200 K. We show that this effect is metastable. We demonstrate using capacitance and current-voltage measurements coupled with deep level transient spectroscopy that this metastability is a result of the presence of DX centers, associated with the donor impurities in the emitter. (C) 2002 Published by Elsevier Science B.V.

引用

页码：293 / 298

页数：6

共 4 条

[1] Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells [J].