Metastability effects in InGaP solar cells

被引:0
|
作者
Sun, GC
Bourgoin, JC
de Angelis, N
Yamaguchi, M
Khan, A
Takamoto, T
Gilard, O
机构
[1] Univ Paris 06, Lab Milieux Desordonnes & Heterogenes, CNRS UMR 7603, F-75252 Paris 05, France
[2] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
[3] Japan Energy Corp, Cent Res Lab, Toda, Saitama 335, Japan
[4] Ctr Natl Etud Spatiales, DTS, AQ, QCPICE, F-31401 Toulouse 4, France
关键词
solar cell; ingap; metastability; DX center;
D O I
10.1016/S0927-0248(02)00181-2
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The electrical characteristics of InGaP n(+)/p/p(+), solar cells are unstable under illumination below typically 200 K. We show that this effect is metastable. We demonstrate using capacitance and current-voltage measurements coupled with deep level transient spectroscopy that this metastability is a result of the presence of DX centers, associated with the donor impurities in the emitter. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:293 / 298
页数:6
相关论文
共 50 条
  • [1] Metamorphic GaAsP and InGaP Solar Cells on GaAs
    Tomasulo, Stephanie
    Yaung, Kevin Nay
    Lee, Minjoo Larry
    IEEE JOURNAL OF PHOTOVOLTAICS, 2012, 2 (01): : 56 - 61
  • [2] InGaP-based Quantum Well Solar Cells
    Sayed, Islam E. Hashem
    Hagar, Brandon G.
    Carlin, C. Zachary
    Colter, Peter C.
    Bedair, S. M.
    2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 147 - 150
  • [3] 2.19 eV InGaP solar cells on GaP substrates
    Tomasulo, Stephanie
    Faucher, Joseph
    Lang, Jordan R.
    Yaung, Kevin Nay
    Lee, Minjoo Larry
    2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2013, : 3324 - 3328
  • [4] InGaP/GaAs-based multijunction solar cells
    Takamoto, T
    Kaneiwa, M
    Imaizumi, M
    Yamaguchi, M
    PROGRESS IN PHOTOVOLTAICS, 2005, 13 (06): : 495 - 511
  • [5] Optical Characterization of InAs/InGaP Intermediate Band Solar Cells
    Dias, Clarissa De Paula
    Weiner, Eleonora Cominato
    Kawabata, Rudy Massami Sakamoto
    Jakomin, Roberto
    Souza, Patricia Lustoza
    Pires, Mauricio Pamplona
    35TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO2021), 2021,
  • [6] Characterization of InGaP Heterojunction Emitter Quantum Dot Solar Cells
    Bittner, Zachary S.
    Forbes, David V.
    Bailey, Christopher G.
    Polly, Stephen J.
    Slocum, Michael A.
    Kerestes, Christopher
    Hubbard, Seth M.
    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012, : 3158 - 3161
  • [7] Absorption Enhancement in InGaAsP/InGaP Quantum Well Solar Cells
    Sayed, Islam E. H.
    Jain, Nikhil
    Steiner, Myles A.
    Geisz, John F.
    Bedair, Salah M.
    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2017, : 2195 - 2200
  • [8] Analysis of radiation-induced defects in InGaP materials and solar cells
    Khan, A
    DEFECTS AND DIFFUSION IN SEMICONDUCTORS: AN ANNUAL RETROSPECTIVE IV, 2002, 200-2 : 107 - 124
  • [9] Modelling and simulation of InGaP solar cells under solar concentration: Series resistance measurement and prediction
    Cheknane, A
    Hilal, HS
    Charles, JP
    Benyoucef, B
    Campet, G
    SOLID STATE SCIENCES, 2006, 8 (05) : 556 - 559
  • [10] Te Doping Effect of InGaP in Tunnel Junction on the Performance of InGaP/InGaAs/Ge Triple-Junction Solar Cells
    Jung, Sang Hyun
    Kim, Chang Zoo
    Kim, Youngjo
    Jun, Dong Hwan
    Kim, Hogyoung
    Kang, Ho Kwan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (04) : 1594 - 1599