Relaxation-time limits of non-isentropic hydrodynamic models for semiconductors

被引:17
作者
Xu, Jiang [1 ]
Yong, Wen-An [2 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Dept Math, Nanjing 211106, Peoples R China
[2] Tsinghua Univ, Zhou Pei Yuan Ctr Appl Math, Beijing 100084, Peoples R China
关键词
Relaxation-time limits; Hydrodynamic model; Semiconductors; Critical Besov spaces; EULER-POISSON MODEL; DRIFT-DIFFUSION EQUATIONS; SMOOTH SOLUTIONS; GLOBAL EXISTENCE; EXPONENTIAL STABILITY; SYSTEM;
D O I
10.1016/j.jde.2009.06.018
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
This work deals with non-isentropic hydrodynamic models for semiconductors with short momentum and energy relaxation-times. The high- and low-frequency decomposition methods are used to construct uniform ( global) classical solutions to Cauchy problems of a scaled hydrodynamic model in the framework of critical Besov spaces. Furthermore, it is rigorously justified that the classical solutions strongly converge to that of a drift-diffusion model, as two relaxation times both tend to zero. As a by-product, global existence of weak solutions to the drift-diffusion model is also obtained. (C) 2009 Elsevier Inc. All rights reserved.
引用
收藏
页码:1777 / 1795
页数:19
相关论文
共 23 条
[1]   Global existence of smooth solutions of the N-dimensional Euler-Poisson model [J].
Alì, G .
SIAM JOURNAL ON MATHEMATICAL ANALYSIS, 2003, 35 (02) :389-422
[2]   Global existence and relaxation limit for smooth solutions to the Euler-Poisson model for semiconductors [J].
Alì, G ;
Bini, D ;
Rionero, S .
SIAM JOURNAL ON MATHEMATICAL ANALYSIS, 2000, 32 (03) :572-587
[3]  
ANILE AM, 1995, PITMAN RES NOTES MAT, V340, P3
[4]  
[Anonymous], 1986, Annali di Matematica Pura ed Applicata, DOI [DOI 10.1007/BF01762360, DOI 10.1007/BF01762360.MR916688]
[5]  
[Anonymous], 1998, OXFORD LECT SERIES M
[6]   Particle hydrodynamic moment models in biology and microelectronics: singular relaxation limits [J].
Chen, GQ ;
Jerome, JW ;
Zhang, B .
NONLINEAR ANALYSIS-THEORY METHODS & APPLICATIONS, 1997, 30 (01) :233-244
[7]   Global exponential stability of classical solutions to the hydrodynamic model for semiconductors [J].
Fang, Daoyuan ;
Xu, Jiang ;
Zhang, Ting .
MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES, 2007, 17 (10) :1507-1530
[8]   The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors [J].
Gasser, I ;
Natalini, R .
QUARTERLY OF APPLIED MATHEMATICS, 1999, 57 (02) :269-282
[9]   The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations [J].
Hsiao, L ;
Zhang, KJ .
JOURNAL OF DIFFERENTIAL EQUATIONS, 2000, 165 (02) :315-354
[10]   Global existence and exponential stability of smooth solutions to a full hydrodynamic model to semiconductors [J].
Hsiao, L ;
Jiang, S ;
Zhang, P .
MONATSHEFTE FUR MATHEMATIK, 2002, 136 (04) :269-285