Growth of cobalt silicide on Si(100) by molecular beam epitaxy

被引：0

作者：

Dhar, A ^{[1
]}

Kar, GS ^{[1
]}

Ray, SK ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

来源：

PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷

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D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CoSi2 films on Si(100) have been grown by molecular beam epitaxy (MBE). The structural and electrical properties were studied by X-ray diffraction and resistivity measurements as a function of temperature. The films are polycrystalline in nature and the relative amount of misoriented grains can be controlled by varying the growth conditions. Grain size and surface roughness have been measured using scanning tunneling microscopy (STM) and correlated with the resistivity data. Schottky barrier height for CoSi2/n-Si junction is calculated from current-voltage data and is found to be 0.64 eV.

引用

页码：364 / 366

页数：3

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