PHASE-CHANGE TECHNOLOGY AND THE FUTURE OF MAIN MEMORY

被引：262

作者：

Lee, Benjamin C. ^{[1
]}

Zhou, Ping

Yang, Jun ^{[2
]}

Zhang, Youtao

Zhao, Bo

Ipek, Engin ^{[3
]}

Mutlu, Onur ^{[4
]}

Burger, Doug

机构：

[1] Stanford Univ, VLSI Res Grp, Stanford, CA 94305 USA

[2] Univ Pittsburgh, Dept Elect & Comp Engn, Pittsburgh, PA 15260 USA

[3] Univ Rochester, Rochester, NY 14627 USA

[4] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA

来源：

IEEE MICRO | 2010年 / 30卷 / 01期

基金：

美国国家科学基金会;

关键词：

RANDOM-ACCESS MEMORY; PRAM;

D O I：

10.1109/MM.2010.24

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Phase-change memory may enable continued scaling of main memories, but PCM has higher access latencies, incurs higher power costs, and wears out more quickly than dram this article discusses how to mitigate these limitations through buffer sizing, row caching. Write reduction, and wear leveling, to make PCM a viable dram alternative for scalable main memories.

引用

页码：131 / 141

页数：11

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