Monolithic growth of GaAs laser diodes on Si(001) by optimal AlAs nucleation with thermal cycle annealing

被引:9
作者
Ko, Young-Ho [1 ]
Kim, Kap-Joong [1 ]
Han, Won Seok [1 ]
机构
[1] Elect & Telecommun Res Inst ETRI, ICT Creat Res Lab, 218 Gajeong Ro, Daejeon 34129, South Korea
关键词
QUANTUM-DOT LASERS; ARRAY; INP;
D O I
10.1364/OME.411328
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A GaAs quantum-well laser diode was directly grown on silicon (001) substrate by a hybrid technique comprising AlAs nucleation and thermal cycle annealing. The hybrid technique provided the advantages of superior surface roughness, high quantum efficiency, and low threading dislocation density (TDD) of a thin buffer. The TDD was quantitatively characterized through the electron channeling contrast imaging method. Directly grown GaAs on Si exhibited a TDD of 5.45 x 10(7) /cm(2) with small thickness of approximately 1.5 mu m. The roughness and quantum efficiency of GaAs on Si was enhanced by adopting the nucleation layer of AlAs. We found that there exists an optimal thickness of AlAs nucleation to be 1.68 nm through structural and optical analysis. Based on optimized GaAs on Si, the GaAs quantum-well laser diode was directly grown with a TDD of 2.5 x 10(7) /cm(2). Whole epitaxial layers were grown by metalorganic chemical vapor deposition. An edge-emitting broad stripe laser diode was successfully fabricated with a cavity length and width of 1120 mu m and 60 mu m, respectively. The continuous-wave lasing at room temperature was realized with a threshold current density of 643 A/cm(2) and maximum output power of 19.7 mW at a single facet, where a threshold current density of 317 A/cm(2) was obtained under pulsed operation condition. This result would constitute a building block to realize silicon-based on-chip light sources.
引用
收藏
页码:943 / 951
页数:9
相关论文
共 35 条
[1]   GaAs epitaxy on Si substrates: modern status of research and engineering [J].
Bolkhovityanov, Yu B. ;
Pchelyakov, O. P. .
PHYSICS-USPEKHI, 2008, 51 (05) :437-456
[2]  
Chen SM, 2016, NAT PHOTONICS, V10, P307, DOI [10.1038/nphoton.2016.21, 10.1038/NPHOTON.2016.21]
[3]   Hybrid III-V on Silicon Lasers for Photonic Integrated Circuits on Silicon [J].
Duan, Guang-Hua ;
Jany, Christophe ;
Le Liepvre, Alban ;
Accard, Alain ;
Lamponi, Marco ;
Make, Dalila ;
Kaspar, Peter ;
Levaufre, Guillaume ;
Girard, Nils ;
Lelarge, Francois ;
Fedeli, Jean-Marc ;
Descos, Antoine ;
Ben Bakir, Badhise ;
Messaoudene, Sonia ;
Bordel, Damien ;
Menezo, Sylvie ;
de Valicourt, Guilhem ;
Keyvaninia, Shahram ;
Roelkens, Gunther ;
Van Thourhout, Dries ;
Thomson, David J. ;
Gardes, Frederic Y. ;
Reed, Graham. T. .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2014, 20 (04)
[4]   Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].
Fujii, T ;
Gao, Y ;
Sharma, R ;
Hu, EL ;
DenBaars, SP ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857
[5]   Multiwavelength membrane laser array using selective area growth on directly bonded InP on SiO2/Si [J].
Fujii, Takuro ;
Takeda, Koji ;
Nishi, Hidetaka ;
Diamantopoulos, Nikolaos-Panteleimon ;
Sato, Tomonari ;
Kakitsuka, Takaaki ;
Tsuchizawa, Tai ;
Matsuo, Shinji .
OPTICA, 2020, 7 (07) :838-846
[6]   CMOS-integrated GaN LED array for discrete power level stepping in visible light communications [J].
Griffiths, Alexander D. ;
Islim, Mohamed Sufyan ;
Herrnsdorf, Johannes ;
McKendry, Jonathan J. D. ;
Henderson, Robert ;
Haas, Harald ;
Gu, Erdan ;
Dawson, Martin D. .
OPTICS EXPRESS, 2017, 25 (08) :A338-A345
[7]   Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon [J].
Inoue, Daisuke ;
Jung, Daehwan ;
Norman, Justin ;
Wan, Yating ;
Nishiyama, Nobuhiko ;
Arai, Shigehisa ;
Gossard, Arthur C. ;
Bowers, John E. .
OPTICS EXPRESS, 2018, 26 (06) :7022-7033
[8]   Silicon photonics [J].
Jalali, Bahrain ;
Fathpour, Sasan .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2006, 24 (12) :4600-4615
[9]   Low threading dislocation density GaAs growth on on-axis GaP/Si (001) [J].
Jung, Daehwan ;
Callahan, Patrick G. ;
Shin, Bongki ;
Mukherjee, Kunal ;
Gossard, Arthur C. ;
Bowers, John E. .
JOURNAL OF APPLIED PHYSICS, 2017, 122 (22)
[10]  
Kim SB, 2017, APPL SCI CONVERG TEC, V26, P79, DOI 10.5757/ASCT.2017.26.4.79