Strain-induced microstructural evolution in epitaxial Fe/MgO layers grown on InxGa1-xAs(001) substrates

被引：9

作者：

Kim, Kyung-ho ^{[1
]}

Kim, Hyung-jun ^{[1
]}

Kim, Gyeung-Ho ^{[2
]}

Chang, Joonyeon ^{[1
]}

Han, Suk-hee ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Spintron Res, Seoul 136791, South Korea

[2] Korea Inst Sci & Technol, Ctr Nanomat Anal, Seoul 136791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 16期

关键词：

SPIN INJECTION; FE FILMS; MGO; SEMICONDUCTOR; GAAS(001); GAAS;

D O I：

10.1063/1.3231075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial Fe/MgO layers have been grown on InxGa1-xAs substrates to examine the epitaxial relationship and the morphological variation with respect to indium content, x and the growth temperature of MgO interlayer. The in-plane epitaxial relationship of Fe[010]//MgO[1 (1) over bar0]//InxGa1-xAs[1 (1) over bar0] is found in the structures of all x values for 4 nm thick MgO layers grown at room temperature. Epitaxial MgO interlayers grow in two-dimensional layer regardless of x while the morphology of subsequent Fe changes from two-dimensional layer to three-dimensional islands with the increase of x. Furthermore, the average size of Fe islands becomes smaller at higher x value due to enhanced underlying strain. The elevated growth temperature of MgO has led to partial strain relaxation, resulting in the suppression of three-dimensional Fe island formation. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3231075]

引用

页数：3