Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements

被引：0

作者：

Longeaud, C. ^{[1
]}

Schmidt, J. A. ^{[2
,3
]}

Koropecki, R. R. ^{[2
,3
]}

Kleider, J. P.

机构：

[1] Univ Paris 06, CNRS, Lab Genie Elect Paris, UMR 8507, F-91190 Gif Sur Yvette, France

[2] INTEC UNL CONICET, Santa Fe, NM USA

[3] FIQ UNL, Santa Fe, NM USA

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2009年 / 11卷 / 09期

关键词：

Thin films; Photoconductivity; Computer simulation; PHASE-SHIFT ANALYSIS; MODULATED-PHOTOCURRENT; GAP-STATES; BAND-TAIL; ELECTRONS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, after a short recall of the information that can be extracted from different experiments based on the photoconductivity properties of a semiconductor, we present experimental results obtained on a thin film of hydrogenated amorphous silicon in the as-deposited, light-soaked and annealed states We show that, taking advantage of the apparent discrepancies between the results of dc photoconductivity and modulated photoconductivity, density of states distributions as well as some of their capture coefficients can be deduced The evolution of these quantities with light-soaking and annealing is also shown The experimental results are also illustrated by means of numerical simulations

引用

页码：1064 / 1071

页数：8

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