Bipolar magnetic semiconductor in silicene nanoribbons

被引:16
作者
Farghadan, Rouhollah [1 ]
机构
[1] Univ Kashan, Dept Phys, Kashan 8731751167, Iran
关键词
ELECTRONIC-STRUCTURES; SPIN-POLARIZATION; ROOM-TEMPERATURE; GRAPHENE; EDGE; SPINTRONICS; FIELD; MAGNETORESISTANCE; TRANSISTORS; TRANSPORT;
D O I
10.1016/j.jmmm.2017.04.016
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A theoretical study was presented on generation of spin polarization in silicene nanoribbons using the single-band tight-binding approximation and the non-equilibrium Green's function formalism. We focused on the effect of electric and exchange magnetic fields on the spin-filter capabilities of zigzag-edge silicene nanoribbons in the presence of the intrinsic spin-orbit interaction. The results show that a robust bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps can be obtained when exchange magnetic and electric field strengths are both larger than the intrinsic spinorbit interaction. Therefore, zigzag silicene nanoribbons could act as bipolar and perfect spin filter devices with a large spin-polarized current and a reversible spin polarization in the vicinity of the Fermi energy. We also investigated the effect of edge roughness and found that the bipolar magnetic semiconductor features are robust against edge disorder in silicene nanoribbon junctions. These results may be useful in multifunctional spin devices based on silicene nanoribbons. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:206 / 211
页数:6
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