Electron-electron interactions in antidot-based Aharonov-Bohm interferometers

被引:17
作者
Ihnatsenka, S. [1 ]
Zozoulenko, I. V. [2 ]
Kirczenow, G. [1 ]
机构
[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
[2] Linkoping Univ, Dept Sci & Technol ITN, S-60174 Norrkoping, Sweden
来源
PHYSICAL REVIEW B | 2009年 / 80卷 / 11期
关键词
QUANTUM HALL REGIME; RESISTANCE;
D O I
10.1103/PhysRevB.80.115303
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a microscopic picture of quantum transport in quantum antidots in the quantum Hall regime taking electron interactions into account. We discuss the edge state structure, energy-level evolution, charge quantization and linear-response conductance as the magnetic field or gate voltage is varied. Particular attention is given to the conductance oscillations due to Aharonov-Bohm interference and their unexpected periodicity. To explain the latter, we propose the mechanisms of scattering by point defects and Coulomb blockade tunneling. They are supported by self-consistent calculations in the Hartree approximation, which indicate pinning and correlation of the single-particle states at the Fermi energy as well as charge oscillation when antidot-bound states depopulate. We have also found interesting phenomena of antiresonance reflection of the Fano type.
引用
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页数:11
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